HMC406MS8GETR RF Power Transistor
Product Features:
- Wideband operation from 0.1 to 6.0 GHz
- High Gain: 15.5 dB at 0.9 GHz
- High Output Power: 19.5 dBm at 0.9 GHz
- Low Noise Figure: 2.6 dB at 0.9 GHz
- High Power Added Efficiency: 34% at 0.9 GHz
- High Output IP3: +27 dBm at 0.9 GHz
- Low DC Power Consumption: 890 mW at 3V
- Low Current Gain Cutoff Frequency: Fc = 7.3 GHz
- High Stability: +25 °C to +85 °C
- Lead-free, RoHS compliant package
Applications:
- High power amplifier applications
- Wideband communication systems
- Wireless infrastructure
- Point-to-point radio links
- Multi-carrier GSM/EDGE systems
- W-CDMA/HSPA/LTE systems
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.
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HMC406MS8GETR RF Power Transistor 5GHz High Frequency And Power Output Images
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